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| DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES * Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR * Interdigitated structure provides high emitter efficiency * Gold metallization realizes very good stability of the characteristics and excellent lifetime * Multicell geometry gives good balance of dissipated power and low thermal resistance * Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.5 GHz and 1.8 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. Top view handbook, 4 columns LLE16350X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.65 VCE (V) 24 ICQ (A) 0.1 PL1 (W) 29 Gpo (dB) 8 C (%) Zi; ZL () typ. 48 see Figs 8 and 9 PINNING - SOT437A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b 3 e 2 MAM112 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 03 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Pi Ptot Tstg Tj Tsld Note 1. Up to 0.2 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage DC collector current input power total power dissipation storage temperature junction temperature soldering temperature t 10 s; note 1 Tmb = 75 C CONDITIONS open emitter RBE = 220 open base open collector LLE16350X MIN. - - - - - MAX. 45 30 15 3 6 8 50 +150 200 235 UNIT V V V V A W W C C C f = 1.65 GHz; VCE = 24 V; class AB - - -65 - - 10 MBD760 60 P tot MEA577 IC (A) (W) 40 1 20 10 1 1 10 VCE (V) 10 2 0 0 50 100 150 200 T mb ( o C) Tmb 75 C. (I) Region of permissible DC operation. (II) Permissible extension provided RBE 220 . Fig.2 DC SOAR. Fig.3 Power derating curve. 1997 Feb 03 3 Philips Semiconductors Product specification NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tj = 100 C LLE16350X VALUE max. 2 typ. 0.2 UNIT K/W K/W CHARACTERISTICS Tmb = 25 C unless otherwise specified. SYMBOL ICBO V(BR)CER V(BR)CBO V(BR)EBO hFE PARAMETER collector cut-off current collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage DC current gain CONDITIONS IE = 0; VCB = 20 V IC = 15 mA; RBE = 220 IC = 15 mA IE = 15 mA IC = 1 A; VCE = 3 V - 30 45 3 15 MIN. MAX. 3 - - - 100 UNIT mA V V V APPLICATION INFORMATION Microwave performance up to Tmb = 25 C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.65 VCE (V) 24 ICQ (A) 0.1 PL1 (W) 29 typ. 32 Gpo (dB) 8 typ. 9 C (%) typ. 48 Zi; ZL () see Figs 8 and 9 1997 Feb 03 4 Philips Semiconductors Product specification NPN microwave power transistor LLE16350X handbook, full pagewidth 30 30 0.8 5.2 40 7.7 2.8 3.5 2.5 2.5 5.0 5.0 3.0 4.0 12.0 3.0 2.0 8.0 0.7 5.0 2.5 4.0 2.5 5.0 0.7 4.7 2.7 2.7 40 handbook, full pagewidth input F , C5 V BB 1 L1 C1 C2 Rr MBD758 C6 VCC L2 output C4 C3 MBD759 The test circuit is split into two independent halves, each being 30 x 40 mm in size. Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: r = 10. Fig.4 Prematching test circuit board. 1997 Feb 03 5 Philips Semiconductors Product specification NPN microwave power transistor LLE16350X handbook, full pagewidth BIAS CIRCUIT PREMATCHING TEST CIRCUIT VCC R1 TR1 C5 R2 F1 P1 D1 R3 C7 L1 DUT L2 C6 D2 MEA600 Fig.5 Class AB bias circuit. List of components (see Figs 4 and 5) COMPONENT TR1 C1, C4 C2, C3 C5, C6 C7 D1 D2 L1 L2 P1 R1 R2 R3 F1 Rr Notes 1. In thermal contact with TR1. 2. In thermal contact with DUT. 1997 Feb 03 6 DESCRIPTION transistor, BDT91 or equivalent DC blocking chip capacitor trimmer capacitor feedthrough bypass capacitor electrolytic capacitor diode BY239 or equivalent; note 1 diode BY239 or equivalent; note 2 4 turns 0.5 mm copper wire; internal diameter = 2 mm 3 turns 0.5 mm copper wire; internal diameter = 2 mm linear potentiometer resistor resistor resistor ferrite bead copper rivet 4.7 k 100 , 0.25 W 10 k, 0.25 W 56 , 0.25 W Philips tube, 12NC = 4330 030 43081 4.2 x 2.2 x 3.2 mm (4B1) 100 pF 0.5 to 5.0 pF 1500 pF 10 F, >30 V ATC 100A101kp Tekelec 727-1 Erie 1250-003 VALUE ORDERING INFORMATION Philips Semiconductors Product specification NPN microwave power transistor LLE16350X handbook, halfpage 40 MEA581 MEA582 handbook, halfpage 20 PL (W) 30 d im (dBc) 30 I CQ = 100 mA 50 mA 10 mA 10 mA 50 mA 20 40 10 100 mA 0 0 2 4 P i (W) 6 50 0 10 20 Po (av) (W) 30 VCE = 24 V; f1 = 1650 MHz; f2 = 1650.2 MHz. VCE = 24 V; f = 1650 MHz. Fig.7 Fig.6 Load power as a function of input power. Intermodulation distortion as a function of average output power. Input and optimum load impedances VCE = 24 V; ICQ = 0.1 A (see Figs 8 and 9); typical values at PL = PL1. f (GHz) 1.50 1.55 1.60 1.65 1.70 1.75 1.80 Zi () 4.15 + j4.45 5.3 + j3.8 6.2 + j2.45 6.1 + j0.7 5.1 - j0.6 3.9 - j1.1 2.9 - j1.1 ZL () 4.6 - j1.0 4.2 - j0.85 3.8 - j0.8 3.4 - j0.8 3.05 - j0.9 2.75 - j1.0 2.5 - j1.15 1997 Feb 03 7 Philips Semiconductors Product specification NPN microwave power transistor LLE16350X 1 handbook, full pagewidth 0.5 2 0.2 1.5 GHz Zi 5 10 +j 0 -j 1.8 GHz 0.2 0.5 1.65 GHz 2 5 10 10 5 0.2 0.5 1 VCE = 24 V; Zo = 10 ; ICQ = 0.1 A. 2 MBD761 Fig.8 Input impedance as a function of frequency; typical values at PL = PL1. 1 handbook, full pagewidth 0.5 ZL 2 0.2 5 10 +j 0 -j 0.2 1.8 GHz 0.5 1.65 GHz 1.5 GHz 1 2 5 10 10 5 0.2 0.5 1 VCE = 24 V; Zo = 100 W; ICQ = 0.1 A. 2 MBD762 Fig.9 Optimum load impedance as a function of frequency; typical values at PL = PL1. 1997 Feb 03 8 Philips Semiconductors Product specification NPN microwave power transistor PACKAGE OUTLINE LLE16350X 19.1 max 0.13 max 2.3 2.0 seating plane 14.22 1 6.5 max 1.7 max 4.8 max 0.25 M 4.5 min O 3.3 3 6.5 6.2 2 1.7 max 4.5 min MBB945 Dimensions in mm. Torque on screws: max. 0.5 Nm. Recommended screw: M3. Recommended pitch for mounting screw: 19 mm. Fig.10 SOT437A. 1997 Feb 03 9 Philips Semiconductors Product specification NPN microwave power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values LLE16350X This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 03 10 Philips Semiconductors Product specification NPN microwave power transistor NOTES LLE16350X 1997 Feb 03 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580/xxx France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997 Internet: http://www.semiconductors.philips.com SCA53 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127121/00/04/pp12 Date of release: 1997 Feb 03 Document order number: 9397 750 01685 |
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